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| inchange semiconductor product specification silicon npn power transistors 2SC3886 description with to-3p(h)is package high speed high voltage applications horizontal deflection output for high resolution display high speed switching regulator output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1400 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 4 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3886 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;i b =0 600 v v cesat collector-emitter saturation voltage i c =6a; i b =1.5a 5 v v besat base-emitter saturation voltage i c =6a; i b =1.5a 5 v i cbo collector cut-off current v cb =1400v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe dc current gain i c =1a ; v ce =5v 8 15 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 150 pf f t transition frequency i e =0.1a ; v ce =10v 3 8 mhz switching times inductive load t s storage time 2.5 4.0 s t f fall time i cp =6a;i b1 =1.2a f h =64khz l y =120 h;c y =7500pf 0.1 0.5 s inchange semiconductor product specification 3 silicon npn power transistors 2SC3886 package outline fig.2 outline dimensions (unindicated tolerance: 0.20 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC3886 |
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